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profet ? bts612 n1 data sheet 1 2013 - 10 - 11 smart two channel high - s ide power switch features ? overload protection ? current limitation ? short circuit protection ? thermal shutdown ? overvoltage protection (including load dump) ? fast demagnetization of inductive loads ? reverse battery protection 1 ) ? undervoltage and overvoltage shutdown with auto - restart and hysteresis ? open drain diagno stic output ? open load detection in off - state ? cmos compatible input ? loss of ground and loss of v bb protection ? e lectro s tatic d ischarge ( esd ) protection ? green product (rohs compliant) ? aec qualified application ? ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? all types of resistive, inductive and capacitve loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical p ower fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos ? 1 ) with external current limit (e.g. resistor r gnd =150 ? ) in gnd connection, resistor in series with st connection, reverse load current limited by connected load. product summary overvoltage protection v bb(az) 43 v operating voltage v bb(on) 5.0 ... 34 v channels: each both parallel on - state resistance r on 200 100 m ? load current (iso) i l(iso) 2.3 4.4 a current limitation i l(scr) 4 4 a pg - to263 - 7 - 2 + v bb in1 st signal gnd esd profet ? out1 gnd logic voltage sensor voltage source open load detection 1 short to vbb level shifter tem perature sensor 1 rectifier 1 lim it for unclam ped ind. loads 1 gate 1 protection current lim it 1 3 5 2 4 1 load gnd load v logi c overvoltage protection out2 open load detection 2 short to vbb level shifter tem perature sensor 2 rectifier 2 lim it for unclam ped ind. loads 2 gate 2 protection current lim it 2 7 in2 6 charge pum p 1 charge pum p 2
bts612 n1 data sheet 2 2013 - 10 - 11 pin sy mbol function 1 out1 (load, l) output 1, protected high - side power output of channel 1 2 gnd logic ground 3 in1 input 1, activates channel 1 in case of logical high signal 4 v bb positive power supply voltage, the tab is shorted to this pin 5 st diagn ostic feedback: open drain, low on failure 6 in2 input 2, activates channel 2 in case of logical high signal 7 out2 (load, l) output 2, protected high - side power output of channel 2 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4 ) v bb 43 v supply voltage for short circuit protection t j start = - 40 ...+150c v bb 34 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 ? , r l = 5.3 ? , t d = 200 ms, in= low or high v load dump 4 ) 60 v load current (short circuit current, see page 5 ) i l self - limited a operating temperature range storage temperature range t j t stg - 40 ...+150 - 55 ...+150 c power dissipation (dc), t c ? 25 c p tot 36 w inductive load switch - off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const. one channel, i l = 2.3 a, z l = 89 mh, 0 ? : e as 290 mj both channels parallel, i l = 4.4 a, z l = 47 mh, 0 ? : 580 s ee diagrams on page 9 electrostatic discharge capability (esd) in: (human body model) all other pins: acc. mil - std883d, method 3015.7 and esd assn. std. s5.1 - 1993 v esd 1.0 2.0 kv input voltage (dc) v in - 10 ... +16 v c urrent through input pin (dc) current through status pin (dc) see internal circuit diagrams page 7 i in i st ? 2.0 ? 5.0 ma 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 ? resistor in the gnd connection and a 15 k ? resistor in series with the status pin. a resistor for the protection of the input is integrated. 3 ) r i = inter nal resistance of the load dump test pulse generator 4 ) v load dump is setup without the dut connected to the generator per iso 7637 - 1 and din 40839
bts612 n1 data sheet 3 2013 - 10 - 11 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case, both channels: each channel: junction - ambient (free air): r thjc r thja -- -- -- -- -- -- 3.5 7.0 75 k/w smd versio n, device on pcb 5 ) : 37 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 ? m thick) copper area for v bb connection. pcb is vertical without blown air. electrical characteristics parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on - state resistance (p in 4 to 1 or 7) i l = 1.8 a t j =25 c: each channel t j =150 c: r on -- 160 320 200 400 m ? nominal load current, iso norm (pin 4 to 1 or 7) v on = 0.5 v, t c = 85 c each channel: both channels parallel: i l(iso) 1.8 3.5 2.3 4.4 -- -- a output current (pin 1 or 7) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 8 i l(gndhigh) -- -- 10 ma turn - on time in to 90% v out : turn - off time in to 10% v out : r l = 12 ? , t j = - 40...+150c t on t off 80 80 200 200 400 400 ? s slew rate on 10 to 30% v out , r l = 12 ? , t j = - 40...+150c d v /dt on 0.1 -- 1 v / ? s slew rate off 70 to 40% v out , r l = 12 ? , t j = - 40...+150c - d v /dt off 0.1 -- 1 v / ? s
bts612 n1 parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 4 2013 - 10 - 11 operating parameters operating voltage 6 ) t j = - 40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j = - 40...+150c: v bb(under) 3.5 -- 5.0 v underv oltage restart t j = - 40...+25c: t j =+150c: v bb(u rst) -- -- 5.0 7.0 v undervoltage restart of charge pump see diagram page 12 v bb(ucp) -- 5.6 7.0 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.2 -- v overvoltage shutdown t j = - 40...+150c: v bb(over) 34 -- 43 v overvoltage restart t j = - 40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j = - 40...+150c: ? v bb(over) -- 0.5 -- v overvoltage protection 7 ) t j = - 40...+150c: i bb =4 0 ma v bb(az) 42 47 -- v standby current (pin 4) , v in =0 t j = - 40...+150c: i bb(off) -- 90 150 ? a operating current (pin 2) 8 ) , v in =5 v both channels on, t j = - 40...+150c, i gnd -- 0.6 1.2 ma operating current (pin 2) 8 ) one channel on, t j = - 40...+150c:, i gnd -- 0.4 0.7 ma 6 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 7 ) see also v on(cl) in table of protection functions and circuit diagram page 8 . 8 ) add i st , if i st > 0, add i in , if v in >5.5 v
bts612 n1 parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 5 2013 - 10 - 11 protection functions 9 ) initial peak short circuit curren t limit (pin 4 to 1 or 7) i l(scp) t j = - 40c: t j =25c: t j =+150c: 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 12 ) -- 4 -- a output c lamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma: v on(cl) 41 47 53 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 4 to 2) 10 ) - v bb -- -- 32 v reverse battery voltage drop (v out > v bb ) i l = - 1.9 a, each channel t j =150 c: - v on(rev) -- 610 -- mv diagnostic characteristics open load detection current (included in stan dby current i bb(off) ) i l(off) -- 30 -- ? a open load detection voltage t j = - 40..150c: v out(ol) 2 3 4 v 9 ) integrated protection functions are designed to prevent ic destru ction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 10 ) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain - source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop acr oss the intrinsic drain - source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 8 ).
bts612 n1 parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 6 2013 - 10 - 11 input and status feedback 11 ) input resistance t j = - 40..150c, see circuit page 7 r i 2.5 3.5 6 k ? input turn - on threshold volta ge t j = - 40..+150c: v in(t+) 1.7 -- 3.5 v input turn - off threshold voltage t j = - 40..+150c: v in(t - ) 1.5 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v ? off state input current (pin 3 or 6), v in = 0.4 v, t j = - 40..+150c i in(off) 1 -- 50 ? a on state input current (pin 3 or 6), v in = 3.5 v, t j = - 40..+150c i in(on) 20 50 90 ? a delay time for status with open load after input neg. slope (see diagram page 12 ) t d(st ol3) -- 220 -- ? s status output (open drain) zener limit voltage t j = - 40...+150c, i st = +1.6 ma: st low voltage t j = - 40...+25c, i st = +1.6 ma: t j = +150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- 6.1 -- -- -- 0.4 0.6 v 11 ) if a ground resistor r gnd is used, add the voltage drop across this resistor.
bts612 n1 data sheet 7 2013 - 10 - 11 truth table in1 in2 out1 out2 st st bts611l1 BTS612N1 nor mal operation l l h h l h l h l l h h l h l h h h h h h h h h open load channel 1 l l h l h x z z h l h x h(l 12 ) ) h l l h h channel 2 l h x l l h l h x z z h h(l 12 ) ) h l l h h short circuit to v bb channel 1 l l h l h x h h h l h x l 13 ) h h( l 14 ) ) l h h channel 2 l h x l l h l h x h h h l 13 ) h h(l 14 ) ) l h h over tem perature both channel l x h l h x l l l l l l h l l h l l channel 1 l h x x l l x x h l h l channel 2 x x l h x x l l h l h l under voltage/ over voltage x x l l h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 12 ) 12 ) with additional external pull up resistor 13 ) an external short of output to v bb , in the off state, causes an internal current from output to ground. if r gnd is used, an offset vol tage at the gnd and st pins will occur and the v st low signal may be errorious. 14 ) low resistance to v bb may be detected in the on - state by the no - load - detection terms input circuit (esd protection) esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). profet v in2 st out2 gnd bb v st v in1 i st i in1 v bb i bb i l2 v out2 i gnd v on2 1 2 4 3 5 in1 v in2 i in2 v out1 v on1 i l1 out1 6 7 r gnd in gnd i r esd-zd i i i
bts612 n1 data sheet 8 20 13 - 10 - 11 st atus output esd - zener diode: 6.1 v typ., max 5 ma; r st(on) < 380 ? at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). inductive and overvoltage output clamp v on clamped to 47 v typ. overvolt. and reverse batt. protection v z1 = 6.1 v typ., v z2 = 47 v typ., r i = 3.5 k ? typ ? r gnd = 150 ? open - load detection off - state diagnostic condition: v out > 3 v typ.; in low gnd disconnect any kind of load. in case of input=high is v out ? v in - v in(t+ ) . due to v gnd >0, no v st = low signal available. gnd disconnect with gnd pull up any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. st gnd esd- zd +5v r st(on) + v bb out gnd p r ofe t v z v on + v bb in2 st st r gnd gnd r signal gnd logic v z2 in1 r i v z1 open load detection logic unit v out signal gnd i l(ol) off profet v in2 st out2 gnd bb v bb i bb 1 2 4 3 5 in1 out1 6 7 v in1 v in2 v st v gnd profet v in2 st out2 gnd bb v bb 1 2 4 3 5 in1 out1 6 7 v in1 v in2 v st v gnd
bts612 n1 data sheet 9 20 13 - 10 - 11 v bb disconnect with energized inductive load normal load curre nt can be handled by the profet itself. v bb disconnect with charged external inductive load if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch - off energy dissipation energy s tored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = ? on(cl) i l (t) dt, with an approximate solution for r l ? 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) l n (1+ i l r l |v out ( cl ) | ) maximum allowable load inductance for a single switch off (both channels parallel) l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 ? l [mh] i l [a] profet v in2 st out2 gnd bb v bb 1 2 4 3 5 in1 out1 6 7 high profet v in2 st out2 gnd bb 1 2 4 3 5 in1 out1 6 7 v bb high d profet v in st out gnd bb = e e e e as bb l r e load l r l { z l 1 10 100 1000 2 3 4 5 6 7 8
bts612 n1 data sheet 10 20 13 - 10 - 11 typ. transient thermal impedance chip case z thjc = f (t p ), one channel active z thjc [k/w] t p [s] transient thermal impedance chip case z thjc = f (t p ), both channel active z thjc [k/w] t p [s] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 0 0.01 0.02 0.05 0.1 0.2 0.5 d= 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 0 0.01 0.02 0.05 0.1 0.2 0.5 d=
bts612 n1 data sheet 11 2013 - 10 - 11 timing diagrams both channels are symmetric and consequently the diagrams are valid for each channe l as well as for permuted channels figure 1 a : v bb turn on: figure 2 a : switching a lamp: figure 2 b : switching an inductive load in2 v out1 t v bb st open drain in1 v out2 in st out l t v i in st l t v i out
bts612 n1 data sheet 12 2013 - 10 - 11 figure 3 a : short circuit shut down by overtempertature, reset by cooling heating up may require several milliseconds, depending on external conditions figure 4 a : overtemperature: reset if t j < t jt figure 5 a : open load: detection in off - state, turn on/off to open load t d(st,ol3) depends on external circuitry because of high impedance *) i l = 30 ? a typ figure 6 a : un dervoltage: in st l t i other channel: normal operation l(scr) i i l(scp) in st out j t v t out1 t v st in1 i l1 t d(st ol3) t d(st ol3) in2 channel 2: normal operation channel 1: open load in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v
bts612 n1 data sheet 13 2013 - 10 - 11 figure 6 b : undervoltage restart of charge pump charge pump starts at v bb(ucp) =5.6 v typ. figure 7 a : overvoltage: bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state in v out t v bb st on(cl) v v bb(over) v bb(o rst)
bts612 n1 data sheet 14 2013 - 10 - 11 package and ordering code all dimensions in mm p g - to263 - 7 - 2 ordering code BTS612N1 e3128a sp001104824 published by infineon technologies ag , d - 81 726 mnchen ? infineon technologies ag 2013 all rights reserved. attention please! the information herein is given to describ e certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technolo gies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable t o assume that the health of the user or other persons may be endangered.

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